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| Ordering number : EN8972 SBS813 SANYO Semiconductors DATA SHEET SBS813 Applications * Low VF Schottky Barrier Diode 30V, 3.0A Rectifier High frequency rectification (switching regulators, converters, choppers). Features * * * Small switching noise. Low forward voltage (IF=3A, VF max=0.42V). Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle Conditions Ratings 30 30 3.0 20 --55 to +125 --55 to +125 Unit V V A A C C Electrical Characteristics at Ta=25C Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance Symbol VR VF IR C trr Rth(j-a) IR=2.0mA IF=2.0A IF=3.0A VR=15V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. Mouted on a ceramic board (1200mm2!0.8mm) Conditions Ratings min 30 0.335 0.37 90 20 50 0.385 0.42 1.4 typ max Unit V V V mA pF ns C / W Marking : SF Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72606 / 32406SB MS IM TB-00002133 No.8972-1/3 SBS813 Package Dimensions unit : mm 7012-001 0.25 0.3 0.15 Electrical Connection 1 : Anode1 2 : No Contact 3 : Anode2 4 : No Contact 5 : Cathode2 6 : Cathode2 7 : Cathode1 8 : Cathode1 Top view 8 8 7 65 7 6 5 2.8 2.3 1 0.25 2 3 4 1 2 2.9 3 0.65 4 0.75 1 : Anode1 2 : No Contact 3 : Anode2 4 : No Contact 5 : Cathode2 6 : Cathode2 7 : Cathode1 8 : Cathode1 SANYO : VEC8 0.07 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 0.1 0.2 IF -- VF 1000k IR -- VR Ta=125C 100C 75C 100k Reverse Current, IR -- A Forward Current, IF -- A 0 C 10k 50C 1k 10 Ta= 125 C 75 C 50 C 25 C 0C 25C 0C --25C --25 C 100 10 1.0 0.1 0.3 0.4 0.5 0.6 IT09872 0 5 10 15 20 25 30 35 IT09873 Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W 1.8 1.6 1.4 1.2 1.0 180 0.8 0.6 0.4 0.2 0 0 0.5 1.0 360 Average Reverse Power Dissipation, PR(AV) -- W PF(AV) -- IO (1) Reverse Voltage, VR -- V 0.016 0.014 0.012 0.010 0.008 PR(AV) -- VR Rectangular wave 360 (2) (4) (3) (1)Rectangular wave =300 (2)Rectangular wave =240 (3)Rectangular wave =180 (4)Sine wave =180 Rectangular wave V 360 (1) (2) (3) Sine wave R 180 360 Sine wave 0.006 VR 0.004 0.002 0 0 5 10 (1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180 1.5 2.0 2.5 3.0 3.5 IT09874 (4) 15 20 25 30 35 IT10607 Average Output Current, IO -- A Average Reverse Voltage, VR -- V No.8972-2/3 SBS813 140 Tc -- IO Interterminal Capacitance, C -- pF (1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180 7 5 C -- VR 120 Case Temperature, Tc -- C 100 3 2 80 *When mounted in reliability operaion board, Rth(J-a)=50C/W 60 Rectangular wave 40 100 7 5 360 20 0 0 Sine wave 180 360 0.5 1.0 1.5 2.0 (1) (2) (4) (3) 2.5 3.0 3.5 IT10608 3 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Average Output Current, IO -- A 24 IFSM -- t IS Reverse Voltage, VR -- V IT09871 Surge Forward Current, IFSM(Peak) -- A Current waveform 50Hz sine wave 20 16 20ms t 12 8 4 0 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Time, t -- s ID00523 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2006. Specifications and information herein are subject to change without notice. PS No.8972-3/3 |
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